Samsung Leads Semiconductor Paradigm Shift with New Material Discovery

Researchers at the Samsung Advanced Institute of Technology (SAIT) have unveiled the discovery of a new material, called amorphous boron nitride (a-BN), in collaboration with Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge. Published in the journal Nature, the study has the potential to accelerate the advent of the next generation of semiconductors.     2D Materials – The Key to Overcoming Scalability Challenges Recently, SAIT has been working on the research and development of two-dimensional (2D) materials – crystalline materials with a single layer of…

Read More